Ukuphuhliswa kweekristal ze-silicon carbide kunye nezixhobo

I-China ngoyena mvelisi umkhulu kunye nokuthumela ngaphandle i-silicon carbide emhlabeni, ngomthamo ofikelela kwi-2.2 yezigidi zeetoni, itshayela ngaphezulu kwe-80% yetotali iyonke. Nangona kunjalo, ukwanda komthamo ogqithisileyo kunye nokugqithisa kukhokelela ekusetyenzisweni komthamo ngaphantsi kwe-50%. Ngo-2015, imveliso ye-silicon carbide e-China yafikelela kwi-1.02 yezigidi zeetoni, ngomthamo wokusetyenziswa kwamandla we-46.4% kuphela; ngo-2016, imveliso iyonke yaqikelelwa ukuba malunga ne-1.05 yezigidi zeetoni, ngomthamo wokusetyenziswa komthamo we-47.7%.
Ukusukela oko i-China ye-silicon carbide yokuthumela ngaphandle yapheliswa, umthamo we China wesilabhoni wokuthumela ngaphandle wakhula ngokukhawuleza ngo-2013-2014, kwaye wazama ukuzinza ngo-2015-2016. Ngo-2016, ukuthunyelwa kwamanye amazwe e-carbide yaseChina kwafika kwiitoni ezingama-321,500, ukuya kwi-2.1% ngonyaka; Apho, umthamo wokuthengisa ngaphandle waseNingxia wafikelela kwiitoni ezingama-111,900, ukubalwa kwe-34.9% yokuthumela kwelinye ilizwe kunye nokwenza njengothumeli omkhulu we-silicon carbide e-China.
Njengoko iimveliso ze-silicon carbide yase China ubukhulu becala ziiprosesa ezisezantsi zokulungiswa kweemveliso ezinexabiso elongeziweyo, umsantsa wexabiso eliphakathi kokuthumela ngaphandle kunye nokungenisa kakhulu. Ngo-2016, ukuthunyelwa kwamanye amazwe kwe-carbide yase China kwaba nexabiso eliphakathi kwi-USD0.9 / kg, ngaphantsi kwe-1/4 yexabiso lokungenisa eliphakathi (i-USD4.3 / kg).
Silicon khabhayithi isetyenziswa ngokubanzi ngentsimbi kunye nentsimbi, izinto ezingaqondakaliyo, iiseramikhi, photovoltaic, elektroniki njalo njalo. Kwiminyaka yakutshanje, i-silicon carbide ibandakanyiwe kwisizukulwana sesithathu semiconductor njengendawo eshushu ye-R & D kunye nokusetyenziswa. Ngo-2015, ubungakanani beemarike ze-silicon carbide substrate zafikelela kwi-USD111 yezigidi, kwaye ubungakanani bezixhobo zamandla e-silicon carbide zafikelela kwi-USD175 yezigidi; Bobabini baya kubona izinga lokukhula lonyaka elingaphezulu kwama-20% kwiminyaka emihlanu ezayo.
Okwangoku, i-China iphumelele kwi-R & D ye-semiconductor yesilicon khabhayithi, kwaye yaqonda ukuveliswa kobunzima be-2-intshi, 3-intshi, 4-intshi kunye ne-6-intshi yesilicon khabhayithi ye-monocrystalline substrates, i-silicon carbide epitaxial wafers, kunye ne-silicon carbide . Amashishini ameleyo abandakanya i-TanKeBlue Semiconductor, izixhobo ze-SICC, i-EpiWorld International, iDongguan Tianyu Semiconductor, iGlobal Power Technology kunye neNanjing SilverMicro Electronics.
Namhlanje, ukuphuhliswa kweekristal ze-silicon carbide kunye nezixhobo bekuqulathwe kwi-Made in China 2025, Isikhokelo esitsha soPhuhliso lweMizi-mveliso, isiCwangciso seSizwe esiPhakathi neside seSayensi kunye neTekhnoloji yoPhuhliso (2006-2020) kunye neminye imigaqo-nkqubo emininzi yezorhwebo. Iqhutywa yimigaqo-nkqubo emininzi elungileyo kunye neemarike ezisakhulayo ezinje ngezithuthi zamandla amatsha kunye negridi ekrelekrele, imakethi ye-semiconductor yesilicon khabhayithi yemarike iya kungqina ukukhula ngokukhawuleza kwixa elizayo.


Ixesha Post: Jan-06-2012