Mqengqeleki
Iinkcukacha Product
Impendulo Sintered Silicon khabhayithi mqengqelekis ziphawulwa ngamandla aguquliweyo obushushu aphezulu okuguqa, ukuxhathisa i-oxidation, ukumelana nokunxiba okukhulu, ukophuka simahla ekusebenziseni ixesha elide kubushushu obuphezulu, ukugoba simahla kunye nokususwa.
Isicelo:
Inokusetyenziselwa indawo yokudubula enobushushu obuphezulu yee-kilns ze-ceramics zemihla ngemihla, i-porcelain yococeko, ukwakha i-porcelain, iglasi kunye nezinto zemagnethi. Ubomi benkonzo bungaphezulu kwama-10 amaxesha e-aluminium oxide roller.
Iimpawu eziphambili zobuGcisa beMveliso yeSilicon Carbide yeMveliso
Umba |
Iyunithi |
Idatha |
Ubushushu obuSebenzayo |
℃ |
1380 |
Ukuxinana |
g / cm³ |
.03.02 |
Ukuthanda |
% |
< 0.1 |
<0.1 |
Amandla okugoba |
250(20MPHA |
Amandla okugoba |
℃) |
|
280 (1200 ℃) |
Modulus elula |
330(20MPHA |
Modulus elula |
IGPA |
|
300 (1200 ℃) |
Ukuqhuba kobushushu |
W / mk |
I-45 (1200 ℃) |
KUkwanda koLungelelwaniso lobushushu-1× 10 |
-6 |
4.5 |
13 |
|
Ubunzima be-Mohs |
Ubuncwane kunye neAcidity |
EgqwesileyoAmandla okugoba kweRBSiC (SiSiC) Mqengqeleki
yi-250MP, umlingani wokhuseleko ngamaxesha ama-5, kunye nobude bokuthwala amandla emitha enye. Ukuba ubude bemveliso bungu-L, umthamo wokuthwala unokubalwa ngale ndlela ilandelayo:
Amandla okugoba kweRBSiC (SiSiC) Umkhosi oxineneyo = Ixabiso leNdawo yoku-1 / L, uMkhosi oPhumezayo woMkhosi oSasazwayo oSinganayo = Ixabiso lomphezulu * 1 / L. Ubushushu obuguqukayo bokuthwala amandla yi-1380 is.
Uluhlu lokuthwala umthwalo |
Ubude (m) |
Amacandelo Amacandelo |
Ukulayisha okugxilwe (kg) |
||
L |
Ukuhanjiswa ngokufanayo ngokulayishwa (kg) |
D1 |
δ |
||
1 |
35 |
23 |
6 |
70 |
140 |
1 |
40 |
28 |
6 |
97 |
194 |
1 |
45 |
33 |
6 |
130 |
260 |
1 |
50 |
38 |
6 |
167 |
334 |
1 |
55 |
44 |
7 |
261 |
522 |
1 |
60 |
46 |
7 |
283 |
566 |
1 |
80 |
46 |
8 |
604 |
1208 |
D2
Ukupakisha: Njengoko iimfuno
Ixesha lokuhambisa: 1 * 20GP isikhongozeli sithatha malunga neentsuku eziyi-10-20
MOQ: 5pieces